H20R1203,Reverse Conducting IGBT,1200V,20A,TO-247-3

The H20R1203 is a high-performance reverse conducting IGBT designed for efficient power switching. Offering a maximum collector-emitter voltage of 1200V and continuous current handling up to 20A, this component is ideal for applications like inductive heating, industrial power management, and motor drives. The integrated body diode ensures low forward voltage, optimizing performance for soft commutation. The TO-247-3 package allows for reliable and easy thermal management, while the low EMI characteristics make it suitable for high-frequency operations.

• Reverse Conducting IGBT with Monolithic Body Diode
• Maximum collector-emitter voltage: 1200V
• Maximum continuous collector current: 20A (40A pulse)
• Gate-emitter voltage range: ±20V
• Low VCEsat for reduced switching losses
• High ruggedness and easy parallel switching capability