H20R1203,IGBT, TO-247-3,1200V, 20A

The H20R1203 is a high-performance IGBT transistor designed for use in applications that demand high power efficiency and reliability, such as inductive heating, power supplies, and industrial drives. This IGBT leverages TrenchStop® technology, providing tight parameter distribution, high ruggedness, and temperature-stable behavior. The component features a low collector-emitter saturation voltage, making it ideal for high-switching frequency environments.

This transistor includes an integrated body diode for soft commutation, enhancing its use in circuits with inductive loads. With a voltage rating of 1200V and current handling capability up to 20A, the H20R1203 is well-suited for applications requiring robust performance in demanding environments.

• High Power Rating: Supports up to 1200V, suitable for high-voltage applications.
• TrenchStop® Technology: Ensures low VCEsat, high ruggedness, and stable thermal performance.
• Integrated Body Diode: Optimized for soft commutation and inductive load compatibility.
• High Surge Capability: Designed to withstand high inrush currents.
• Compact TO-247-3 Package: Allows easy mounting and integration into PCB designs.
• RoHS Compliant: Environmentally friendly with lead-free, RoHS-compliant construction.