Specifications:

Type: IGBT Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 75
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 30
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 200
Package: TO3P