GB10NC60KD, IGBT Transistor ,10A 600V ,TO-263 Package

The GB10NC60KD is a high-performance 600V, 10A IGBT transistor designed and manufactured by STMicroelectronics, offering a low voltage drop and high switching speed for various power applications. Built using advanced PowerMESH™ technology, it provides an excellent balance between conduction losses and switching performance.

Its TO-263 (D2PAK) package allows for efficient heat dissipation and robust operation, making it well-suited for high-frequency motor controls, switch-mode power supplies (SMPS), and power factor correction (PFC) circuits.

With its 10μs short-circuit withstand time, soft recovery anti-parallel diode, and high input capacitance, this IGBT ensures optimal performance under demanding conditions. The GB10NC60KD can handle continuous collector currents of up to 20A at 25°C case temperature and is highly efficient in resonant and soft-switching applications.

Key Features :

• 600V collector-emitter breakdown voltage for high-voltage applications.
• Maximum collector current of 10A at 100°C case temperature and 20A at 25°C.
• Low collector-emitter saturation voltage, minimizing conduction losses.
• Short-circuit withstand time of 10μs for enhanced protection.
• TO-263 (D2PAK) package ensures excellent thermal performance.
• Fast switching speed for use in high-frequency motor drives and SMPS.