HGTG20N60B3D,UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode,TO-247-3

The HGTG20N60B3D is a Generation III MOS-gated high-voltage switching device that merges the advantages of MOSFETs and bipolar transistors. It offers high input impedance and low on-state conduction loss, making it ideal for applications requiring efficient high-voltage switching at moderate frequencies. The device includes a hyperfast anti-parallel diode, enhancing its performance in circuits where rapid switching and low conduction losses are essential.​

Key Features:

• High Voltage Capability: Supports collector-emitter voltages up to 600V, suitable for high-voltage applications.​
• High Current Handling: Continuous collector current of 40A at 25°C, with pulsed capability up to 160A.​
• Fast Switching: Typical fall time of 140ns at 150°C, enabling efficient high-speed operation.​
• Short Circuit Rated: Designed to withstand short circuit conditions, enhancing reliability.​
• Low Conduction Loss: Combines MOSFET high input impedance with low on-state conduction loss.​
• Integrated Anti-Parallel Diode: Features a hyperfast anti-parallel diode (RHRP3060) for efficient reverse recovery.​

Additional Specifications:

• Mounting Style: Through Hole
• Collector-Emitter Voltage (VCEO) : 600V
• Maximum Gate Emitter Voltage: 30V
• Continuous Collector Current at 25 C: 40A
• Power Dissipation: 165W
• Operating Temperature Range: -55+150°C