STP11NM60, N-Channel Power MOSFET, TO-220

The STP11NM60 is part of STMicroelectronics’ MDmesh™ series — a high-efficiency, high-voltage MOSFET designed for fast-switching and energy-saving power conversion. With a 600V rating and rugged avalanche capabilities, it's ideally suited for power supplies, PFC stages, and lighting ballasts. The TO-220 package provides excellent thermal dissipation for compact high-power designs.

Key Features:

• 600V Drain-Source Voltage: Ideal for high-voltage switching applications.
• Low On-Resistance: R_DS(on) = 0.4 Ω (typ), enhances power efficiency.
• Fast Switching Performance: 20 ns rise/fall times for efficient high-speed operation.
• Low Gate Charge: 30 nC total gate charge simplifies drive requirements.
• Avalanche Rated: Robust design rated for 350 mJ avalanche energy.
• 100% Avalanche Tested & Low Capacitance: Improves reliability and dynamic performance.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 11A
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 3-5V
• Power Dissipation: 160W
• Operating Temprature: -65+150°C