BUK7606-55B,N-Channel TrenchMOS Power MOSFET,TO-263-2

The BUK7606-55B is a high-performance N-Channel TrenchMOS Power MOSFET designed for automotive, industrial, and general-purpose power switching applications. Built with Nexperia’s TrenchMOS technology, this MOSFET delivers low conduction losses, high efficiency, and high-speed switching capabilities.

With a Drain-Source Voltage (Vds) of 55V and a Continuous Drain Current (Id) of 75A, the BUK7606-55B is optimized for power electronics, automotive control units, DC-DC converters, and load management systems. Its low on-resistance (RDS(on)) of 5.1mΩ minimizes heat generation and maximizes energy efficiency.

Encased in a TO-263-2 (D2PAK) surface-mount package, the BUK7606-55B provides excellent thermal management and reliability. Designed for harsh environments, this MOSFET is AEC-Q101 qualified and can withstand high temperatures up to 175°C, making it an excellent choice for automotive power electronics, motors, lamps, and solenoid drivers.

• High Power Handling: Supports 55V Drain-Source Voltage (Vds) and 75A Continuous Drain Current (Id), making it ideal for high-performance power switching.
• Low On-Resistance: Offers an RDS(on) of 5.1mΩ, ensuring minimal power loss and efficient energy transfer.
• High-Speed Switching: Features a low gate charge and optimized dynamic response for fast switching in power applications.
• Thermal Resilience: Designed to handle high thermal loads with an operating temperature range of -55°C to +175°C.
• Automotive-Grade Compliance: AEC-Q101 qualified, making it ideal for automotive, industrial, and power management applications.
• Surface Mount TO-263-2 Package: Allows for efficient PCB integration with excellent thermal dissipation for long-term reliability.