TP26NM60N, N-Channel Power MOSFET, TO-220

The STP26NM60N is part of STMicroelectronics' MDmesh™ II series, designed for high-efficiency switching applications. Its high voltage rating and optimized R_DS(on) make it well-suited for use in PFC stages, high-voltage DC-DC converters, and other switching power supply applications. It features rugged avalanche energy handling, fast switching, and low gate drive requirements, packaged in a standard TO-220.

Key Features:

• 600V Breakdown Voltage: Optimized for high-voltage switching in power supplies and converters.
• Low R_DS(on): Typical value of 0.135 Ω, ensures efficient power delivery.
• MDmesh™ II Technology: Provides improved switching performance and lower gate charge.
• Fast Switching: Gate charge of 60 nC, turn-on delay ~13 ns, turn-off delay ~85 ns.
• Avalanche Rated: Withstands 610 mJ of avalanche energy.
• Robust Thermal Characteristics: Power dissipation of 140 W, junction-case thermal resistance of 0.89 °C/W.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 20A At 25°C
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 140W
• Operating Temprature: -55+150°C