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FGA180N33, N-Channel IGBT with Low Saturation Voltage, TO-3P Package
AED 40.00


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You may check out all the available products and buy some in the shop.
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The FGA180N33 is a 330V, 180A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Utilizing advanced trench technology, this IGBT ensures low conduction and switching losses, making it ideal for use in plasma display panels (PDPs), power inverters, motor drivers, and other power conversion circuits.
With a Collector-Emitter Voltage (VCES) rating of 330V and a Continuous Collector Current of 180A at 25°C, the FGA180N33 provides exceptional performance in applications requiring reliable and efficient power switching. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1V minimizes conduction losses, while the fast switching characteristics ensure reduced energy loss during operation.
Encased in a TO-3P package, the FGA180N33 offers excellent thermal performance and robust mechanical design, ensuring reliable operation in demanding environments.
Key Features :Operating Temperature | -55+150C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
|
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |