IRG4PH50S, N-Channel IGBT with Low Saturation Voltage, TO-247AC
AED 10.00
In stock


Guarantee safe & secure checkout
Guarantee safe & secure checkout
The IRG4PH50S is a 1200V, 57A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for low-frequency switching applications, including motor drives, power inverters, uninterruptible power supplies (UPS), and industrial power control. Built with Generation 4 IGBT technology, this device offers superior switching efficiency, reduced losses, and improved thermal performance compared to earlier models.
With a Collector-Emitter Voltage (VCES) rating of 1200V and a Continuous Collector Current of 57A at 25°C, the IRG4PH50S is optimized for high-power applications. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.47V at 33A ensures minimal conduction losses, maximizing energy efficiency.
The device's fast switching capabilities enable low-loss operation, while the rugged design and improved efficiency make it suitable for various industrial and power conversion applications. Encased in a TO-247AC package, the IRG4PH50S provides excellent thermal performance and robust mechanical durability, ensuring reliable operation in demanding environments.
Key Features :GTIN | 1, |
---|---|
Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
|
![]() |
Available |
Self Pickup |
1 Day |
Free |
![]() |
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
![]() |
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
![]() |
pre-order |
General |
2 Weeks |