G4PH40UD, N-Channel UltraFast IGBT with Soft Recovery Diode, TO-247AC
AEDĀ 14.00
In stock


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The G4PH40UD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this UltraFast IGBT is ideal for use in high-frequency inverters, resonant converters, and induction heating applications.
With a Collector-Emitter Voltage (VCES) rating of 1200V and a Continuous Collector Current of 41A at 25°C, the G4PH40UD provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(on)) of 2.43V at 21A minimizes conduction losses, while its UltraFast switching capabilities ensure efficient high-speed operation.
The device is optimized for high operating frequencies, supporting up to 40 kHz in hard switching and over 200 kHz in resonant mode, making it suitable for a wide range of power conversion applications. Additionally, it features an integrated HEXFRED⢠ultrafast, ultra-soft-recovery anti-parallel diode, improving overall performance by minimizing recovery characteristics and reducing the need for snubbing.
Encased in a standard TO-247AC package, the G4PH40UD offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.
Key Features :Brand | IOR |
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Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |