HGTG20N60A4D, N-Channel IGBT with Anti-Parallel Hyperfast Diode, TO-247

The HGTG20N60A4D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in high-frequency switch mode power supplies, motor drivers, uninterruptible power supply (UPS) systems, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 70A at 25°C, the HGTG20N60A4D provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.8V at 20A minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.

The device features an integrated anti-parallel hyperfast diode with a reverse recovery time of 35 ns, enhancing performance in various power applications. Encased in a standard TO-247 package, the HGTG20N60A4D offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, suitable for high-voltage applications.
• High Current Capability: Continuous Collector Current of 70A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.8V at 20A, reducing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with a typical fall time of 55 ns at T_J = 125°C, enhancing efficiency in switching applications.
• Integrated Anti-Parallel Hyperfast Diode: Features a hyperfast diode with a reverse recovery time of 35 ns, improving performance in various power applications.
• Standard TO-247 Package: Provides ease of integration into various circuit designs with efficient heat dissipation.