FGA70N33BTD, N-Channel IGBT with Low Saturation Voltage, TO-3P
AED 18.00
In stock


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The FGA70N33BTD is a 330V, 70A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Manufactured using trench gate technology, it offers low conduction and switching losses, making it ideal for plasma display panels (PDPs) and other high-frequency power conversion circuits.
With a Collector-Emitter Voltage (VCES) rating of 330V and a Continuous Collector Current of 70A, the FGA70N33BTD is optimized for applications requiring efficient power switching. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.7V reduces conduction losses, improving overall energy efficiency.
The device's fast switching characteristics, combined with an integrated fast recovery diode, enhance performance in power factor correction (PFC) circuits and PDP applications. Encased in a TO-3P package, the FGA70N33BTD provides excellent thermal performance and high durability, ensuring reliable operation.
Key Features :GTIN | 1, |
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Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
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Self Pickup |
1 Day |
Free |
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inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |