GT60M303,N-Channel IGBT,900V,60A,TO-3P

SKU
SCTx3239
Part Number
GT60M303
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The GT60M303 is a fourth-generation N-channel Insulated Gate Bipolar Transistor (IGBT) from Toshiba, designed for high-power switching applications such as industrial motor drives, inverters, and power conversion systems. With a maximum collector-emitter voltage (VCE) of 900V and a continuous collector current of 60A, it offers superior power handling in demanding environments.

Featuring a low collector-emitter saturation voltage (VCE(sat)) of 2.1V and an integrated freewheeling diode, the GT60M303 provides efficient switching performance and reduced power losses. The fast switching speed (0.46μs turn-on and 0.60μs turn-off) ensures reliable operation in high-frequency circuits.

The TO-3P package ensures effective heat dissipation, making it ideal for use in high-power industrial and commercial applications. The GT60M303's robust design supports operation under harsh conditions, including high temperatures and heavy loads.

Key Features :
  • High Voltage Capability: Supports a 900V collector-emitter voltage (VCE), ideal for high-power switching applications.
  • High Current Handling: Delivers a 60A continuous collector current at 25°C and a 120A pulse current capability, suitable for demanding power circuits.
  • Low Saturation Voltage: Features a VCE(sat) of 2.1V (typical), minimizing conduction losses and improving efficiency.
  • Fast Switching Performance: Provides turn-on time of 0.46μs and turn-off time of 0.60μs, optimized for high-frequency applications.
  • Integrated FRD (Freewheeling Diode): Includes a high-speed diode with a reverse recovery time of 0.7μs, enhancing circuit reliability.
  • TO-3P Package: Designed for efficient thermal management, allowing operation in high-power systems.
More Information
GTIN 1,
Max Voltage N/A
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GT60M303,N-Channel IGBT,900V,60A,TO-3P

AED 25.00