GT30F131, 360V 200A N-Channel IGBT,TO-263

SKU
SCTx3236
Part Number
30F131
In stock

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The GT30F131 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a maximum collector-emitter voltage (VCEO) of 360V and a continuous collector current of 200A at 25°C, this IGBT is well-suited for demanding power circuits such as motor drivers, UPS systems, power inverters, and industrial automation.

The low collector-emitter saturation voltage (VCE(sat)) of 1.9V ensures minimal power dissipation and improves system efficiency. Its TO-263 surface-mount package provides excellent thermal performance, allowing reliable operation even in high-temperature environments.

The GT30F131 offers high switching speed and is optimized for applications requiring fast turn-on and turn-off times. With a power dissipation rating of 140W and a maximum operating temperature range up to 175°C, this IGBT is built for durability and high-efficiency energy conversion.

Key Features :
  • High Voltage Rating: Supports 360V collector-emitter voltage (VCEO), ideal for high-power applications.
  • High Current Capacity: Capable of handling 200A continuous collector current at 25°C, ensuring reliable performance in demanding power circuits.
  • Low Saturation Voltage: Features a low VCE(sat) of 1.9V, improving efficiency and reducing power loss.
  • High Power Dissipation: Rated for 140W power dissipation, providing stable operation in high-energy systems.
  • Surface-Mount TO-263 Package: Enables efficient heat dissipation and compact PCB design.
  • High Switching Speed: Optimized for fast switching, making it suitable for inverters, motor control, and power conversion applications.
More Information
GTIN 1,
Max Voltage N/A
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GT30F131, 360V 200A N-Channel IGBT,TO-263

AED 7.00