30J126, N-Channel IGBT with Low Saturation Voltage, TO-3PN Package

SKU
SCTx3213
Part Number
30J126
In stock

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The GT30J126 is a 600V, 30A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications such as motor drivers, high-frequency inverters, and industrial power supplies. Manufactured by Toshiba, this fourth-generation IGBT provides enhanced efficiency, low conduction loss, and fast switching characteristics.

With a Collector-Emitter Voltage (VCES) rating of 600V and a Continuous Collector Current of 30A, the GT30J126 is optimized for high-power applications requiring minimal power dissipation. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.95V at 30A ensures lower conduction losses, enhancing overall system efficiency.

The TO-3PN package offers superior heat dissipation, making it ideal for high-power and industrial applications that require reliable thermal performance. The device's fast switching speed enables higher efficiency in switching power supplies (SMPS), induction heating circuits, and pulse power applications.

Key Features :
  • High Voltage Rating: Collector-Emitter Voltage (VCES) of 600V, suitable for high-power applications.
  • High Current Capability: Continuous Collector Current of 30A at 25°C, peak collector current of 90A for transient loads.
  • Low Saturation Voltage: Collector-Emitter Saturation Voltage (VCE(sat)) of 1.95V at 30A, minimizing conduction losses.
  • Fast Switching Performance: Optimized for high-speed operation with a fall time (tf) of 0.05µs, improving efficiency in dynamic applications.
  • Robust Design: Rated for high thermal performance with a maximum junction temperature of 150°C.
  • TO-3PN Package: Ensures efficient heat dissipation, ideal for power electronics applications.
More Information
GTIN 1,
Max Voltage N/A
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30J126, N-Channel IGBT with Low Saturation Voltage, TO-3PN Package

AED 12.00