You may check out all the available products and buy some in the shop.
30J126, N-Channel IGBT with Low Saturation Voltage, TO-3PN Package
AED 12.00


Guarantee safe & secure checkout
You may check out all the available products and buy some in the shop.
Guarantee safe & secure checkout
The GT30J126 is a 600V, 30A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications such as motor drivers, high-frequency inverters, and industrial power supplies. Manufactured by Toshiba, this fourth-generation IGBT provides enhanced efficiency, low conduction loss, and fast switching characteristics.
With a Collector-Emitter Voltage (VCES) rating of 600V and a Continuous Collector Current of 30A, the GT30J126 is optimized for high-power applications requiring minimal power dissipation. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.95V at 30A ensures lower conduction losses, enhancing overall system efficiency.
The TO-3PN package offers superior heat dissipation, making it ideal for high-power and industrial applications that require reliable thermal performance. The device's fast switching speed enables higher efficiency in switching power supplies (SMPS), induction heating circuits, and pulse power applications.
Key Features :Operating Temperature | -55+150C |
---|---|
Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
|
![]() |
Available |
Self Pickup |
1 Day |
Free |
![]() |
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
![]() |
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
![]() |
pre-order |
General |
4-5 Weeks |