GT30G124,N-Channel IGBT, TO-220SIS
AED 10.00
In stock


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The GT30G124 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in plasma display panels (PDPs), motor drivers, uninterruptible power supply (UPS) systems, and other power conversion circuits.
With a Collector-Emitter Voltage (VCES) rating of 430V and a Pulse Collector Current of 200A at 25°C, the GT30G124 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(sat)) of 2.5V at 25°C minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.
The device features a built-in freewheeling diode tailored for specific applications, enhancing performance in various power applications. Encased in a standard TO-220SIS package, the GT30G124 offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.
Key Features :GTIN | 1, |
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Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |