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The FQA8N100C is a high-voltage, N-Channel QFET MOSFET designed for advanced switching applications. With a maximum drain-source breakdown voltage of 1000V and continuous current rating of 8A, it is ideal for high-efficiency power supplies and motor drives. Manufactured using Fairchild Semiconductor's proprietary process, this device offers low on-resistance, minimized gate charge, and excellent thermal characteristics.
It is capable of withstanding high energy pulses in the avalanche mode, making it suitable for both linear and switching applications. The TO-3PN package allows for effective thermal management, ensuring reliability in demanding environments.Key Features :
| Operating Temperature | -55C To +150C |
|---|---|
| Mounting Style | Through Hole |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |
