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FQA8N100C,N-Channel QFET MOSFET,1000V,8A

FQA8N100C,N-Channel QFET MOSFET,1000V,8A

SKU
SCTx3147
Part Number
FQA8N100C
Brand:
Fairchild Semiconductor
Categories:
Semiconductors, Transistors, MOSFET, Fairchild Semiconductor
AED 12.00
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The FQA8N100C is a high-voltage, N-Channel QFET MOSFET designed for advanced switching applications. With a maximum drain-source breakdown voltage of 1000V and continuous current rating of 8A, it is ideal for high-efficiency power supplies and motor drives. Manufactured using Fairchild Semiconductor's proprietary process, this device offers low on-resistance, minimized gate charge, and excellent thermal characteristics.

It is capable of withstanding high energy pulses in the avalanche mode, making it suitable for both linear and switching applications. The TO-3PN package allows for effective thermal management, ensuring reliability in demanding environments.

Key Features :

  • High drain-source breakdown voltage of 1000V for industrial-grade applications.
  • Low static drain-source on-resistance (Rds(on)) for efficient operation.
  • High peak avalanche current capability for reliable performance.
  • Excellent thermal characteristics with a maximum junction temperature of 150C.
  • Low gate charge for improved switching performance.
  • Designed for high-voltage and high-current applications.
More Information
Brand Fairchild Semiconductor
Mounting Style Through Hole
Max Voltage N/A
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FQA8N100C,N-Channel QFET MOSFET,1000V,8A

AED 12.00