GB30V60DF, N-Channel Trench Gate Field-Stop IGBT with Very High-Speed Switching, TO-247

SKU
SCTx3120
Part Number
GB30V60DF
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The GB30V60DF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) developed using an advanced proprietary trench gate field-stop structure. This device is part of the V series of IGBTs, representing an optimal compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. It is ideal for use in photovoltaic inverters, uninterruptible power supplies (UPS), welding equipment, power factor correction circuits, and other high-frequency converters.

With a Collector-Emitter Voltage (VCES) rating of 600V and a Continuous Collector Current of 30A at 100°C, the GB30V60DF provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.85V at 30A minimizes conduction losses, enhancing overall efficiency.

The device's very high-speed switching capabilities make it suitable for high-frequency applications, while the integrated very fast soft recovery antiparallel diode enhances performance in various power applications. Encased in a standard TO-247 package, the GB30V60DF offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

Key Features :
  • High Voltage Rating: Collector-Emitter Voltage (VCES) of 600V, suitable for medium to high-voltage applications.
  • Moderate Current Capability: Continuous Collector Current of 30A at 100°C, accommodating various power requirements.
  • Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (VCE(sat)) of 1.85V at 30A, reducing conduction losses.
  • Very High-Speed Switching: Optimized for high-frequency applications, ensuring efficient performance in demanding environments.
  • Integrated Very Fast Soft Recovery Antiparallel Diode: Enhances performance in various power applications by providing efficient freewheeling.
  • Standard TO-247 Package: Provides efficient heat dissipation and ease of integration into various circuit designs.
More Information
GTIN 1,
Max Voltage N/A
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GB30V60DF, N-Channel Trench Gate Field-Stop IGBT with Very High-Speed Switching, TO-247

AED 10.00