IRF250, N-Channel Power MOSFET, TO-3 Package

The IRF250 is an N-channel enhancement mode silicon gate power field-effect transistor designed for high-speed switching applications. With a drain-source voltage rating of 200 V and a continuous drain current of 30 A, it is well-suited for high-power applications such as switching regulators, converters, motor drivers, and relay drivers. The MOSFET's low on-resistance of 0.085 Ω reduces conduction losses, while its nanosecond switching speeds enhance performance in high-speed circuits. The device is capable of handling a single pulse avalanche energy of 910 mJ, ensuring reliability under demanding conditions. Encased in a standard TO-3 package, the IRF250 offers robust thermal performance, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 200 V, suitable for high-voltage applications.
• High Continuous Drain Current: Rated at 30 A, ideal for substantial power requirements.
• Low On-Resistance: Features an R_DS(on) of 0.085 Ω, minimizing conduction losses.
• Fast Switching Speed: Nanosecond switching speeds, enhancing efficiency in high-speed applications.
• Single Pulse Avalanche Energy Rated: Capable of handling avalanche energy of 910 mJ, ensuring ruggedness and reliability.
• Standard TO-3 Package: Facilitates easy mounting and efficient heat dissipation.