GT40WR21,N-Channel IGBT,1800V,40A

The GT40WR21 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current applications. Featuring a VCEO Max of 1800V and an output current of 40A, it is ideal for use in inverter systems, power supplies, and other switching applications requiring efficient and reliable performance. The GT40WR21 comes in a TO-3P package, providing excellent thermal management and robust mechanical stability.

It integrates a freewheeling diode within the IGBT chip, which aids in minimizing external components and improving circuit efficiency. Additionally, the fast switching characteristics and low saturation voltage make this IGBT suitable for applications where efficiency and speed are crucial. With an operating temperature range extending up to 175°C, the GT40WR21 is built to withstand harsh operating environments, ensuring consistent and reliable performance.

• High Voltage Handling: Supports up to 1800V Collector-Emitter Voltage (VCEO Max), making it suitable for high-voltage applications.
• High Current Capacity: Capable of handling continuous output current up to 40A.
• Fast Switching: Features low saturation voltage and fast switching, ideal for inverter and power switching applications.
• Integrated Freewheeling Diode: The monolithic integration improves efficiency and reduces component count.
• High Junction Temperature: Designed to operate up to 175°C, ensuring reliability under demanding conditions.
• TO-3P Package: Robust and efficient heat dissipation, ensuring prolonged performance.