GT60N321,IGBT Transistor,1000V,TO-247-3,60A

The GT60N321 TO-247-3 IGBT Transistor is a high-performance, insulated gate bipolar transistor (IGBT) designed for high-power switching applications. Manufactured by Toshiba, this fourth-generation IGBT offers an impressive Collector-Emitter Voltage (VCEO) of up to 1000V and can handle continuous collector currents of 60A**, making it a powerful choice for industrial power systems and motor controls. With a TO-247 package, it ensures effective heat dissipation and durability under high stress. The GT60N321 includes a freewheeling diode for added protection, providing smooth operation in inductive load circuits. It also boasts efficient switching capabilities, making it ideal for high-speed applications. This transistor operates within a wide temperature range, maintaining reliable performance in diverse environmental conditions.

• High Voltage Rating: With a Collector-Emitter Voltage (VCEO) of up to 1000V, ideal for high-power applications.
• High Current Capacity: Supports a maximum continuous collector current (Ic) of 60A, suitable for industrial power circuits.
• Efficient Switching: Designed with a fast turn-off time for high-speed switching applications.
• Durable TO-247 Package: Features a TO-247 package that ensures efficient heat dissipation, making it reliable for heavy-duty applications.
• Integrated Freewheeling Diode: Includes a built-in diode for protecting against inductive loads and enhancing durability.
• Wide Operating Temperature Range: Ensures stable performance under varying temperature conditions.