K20T60, N-Channel IGBT with TRENCHSTOP™ and Fieldstop Technology, TO-220-3

The K20T60 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed with Infineon's TRENCHSTOP™ and Fieldstop technology, offering a balance between conduction and switching losses. This IGBT is ideal for applications such as frequency converters and uninterruptible power supplies (UPS).

With a Collector-Emitter Voltage (V_CE) rating of 600V and a Continuous Collector Current of 20A at 25°C, the K20T60 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V at 25°C minimizes conduction losses, while the short circuit withstand time of 5µs enhances reliability under fault conditions.

The device operates efficiently with a maximum junction temperature of 175°C and features an integrated soft, fast recovery anti-parallel Emitter Controlled HE diode, improving overall performance in switching applications.

Encased in a TO-220-3 package, the K20T60 offers ease of integration into various circuit designs.

• High Voltage Capability: Collector-Emitter Voltage (V_CE) rating of 600V, suitable for high-voltage applications.
• Moderate Current Handling: Continuous Collector Current of 20A at 25°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.5V at 25°C, reducing conduction losses.
• Enhanced Thermal Performance: Maximum Junction Temperature of 175°C, allowing operation in high-temperature environments.
• Short Circuit Robustness: Short circuit withstand time of 5µs, enhancing reliability in fault conditions.
• Integrated Anti-Parallel Diode: Features a soft, fast recovery anti-parallel Emitter Controlled HE diode for improved performance.