IRG4PH50uD,Insulated Gate Bipolar Transistor (IGBT),1200V,45A
AEDĀ 15.00


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The IRG4PH50UD is a high-efficiency insulated gate bipolar transistor (IGBT) designed to deliver excellent performance for high-frequency switching applications. With a Collector-Emitter Breakdown Voltage (VCES) of 1200V and a continuous collector current of 45A, this IGBT is capable of handling demanding electrical loads. It features an integrated ultrafast soft recovery diode (HEXFREDā¢), which ensures smoother operation with minimized losses. The TO-247AC package provides robust and reliable housing, making it suitable for applications such as inverters, motor drives, and power supplies. Its high efficiency and high-speed switching characteristics make it an ideal choice for a wide range of industrial applications.
Key Features :Operating Temperature | -55+150C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |