IXGX120N60B,N-Channel IGBT,600V,200A
AEDĀ 30.00


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The IXGX120N60B is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-frequency switching applications such as motor drives, UPS systems, DC choppers, and industrial automation.
With a maximum collector-emitter voltage of 600V and a continuous collector current of 200A at 25°C, the IXGX120N60B provides superior power handling. The low collector-emitter saturation voltage (VCE(sat)) of 2.1V reduces conduction losses, making it an efficient solution for power-intensive designs.
The IGBT is optimized for fast switching, featuring a turn-on delay of 60ns and a turn-off delay of 200ns, ensuring minimal switching losses. With a power dissipation rating of 560W, it is designed for robust and reliable performance in demanding industrial applications.
Encased in the PLUS247 package, the IXGX120N60B offers excellent heat dissipation, making it suitable for high-density power designs, renewable energy systems, and high-speed power switching applications.
Key Features :Operating Temperature | -55+150C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |