FGA90N33ATD, Trench IGBT with Fast Recovery Diode, TO-3P

SKU
SCTx2857
Part Number
FGA90N33ATD
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The FGA90N33ATD is a 330V, 90A Trench Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Developed with trench gate field-stop technology, this IGBT ensures reduced switching losses and enhanced efficiency in power supplies, motor drives, and high-frequency inverters.

With a Collector-Emitter Voltage (VCE) rating of 330V and a Continuous Collector Current of 90A, the FGA90N33ATD delivers robust performance in demanding power applications. Its low Collector-Emitter Saturation Voltage (VCE(sat)) minimizes conduction losses, while the integrated fast recovery diode further reduces power dissipation during switching.

Encased in a TO-3P package, the FGA90N33ATD offers excellent thermal performance, making it suitable for applications requiring efficient heat dissipation. This device is widely used in consumer electronics, industrial automation, and energy conversion systems.

Key Features :
  • High Voltage Rating: Collector-Emitter Voltage (VCE) rating of 330V, suitable for medium-voltage applications.
  • High Current Capability: Continuous Collector Current of 90A at 25°C, ideal for high-power applications.
  • Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (VCE(sat)) of 2.1V, minimizing conduction losses.
  • TO-3P Package: Standard TO-3P package for through-hole mounting, providing excellent heat dissipation and ease of integration.
  • Integrated Fast Recovery Diode: Improves efficiency and reduces switching losses in various power applications.
  • Fast Switching: Designed with trench gate field-stop technology, ensuring efficient high-speed switching.
More Information
GTIN 1,
Max Voltage N/A
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FGA90N33ATD, Trench IGBT with Fast Recovery Diode, TO-3P

AED 28.00