G4PF50W, N-Channel IGBT with Low Saturation Voltage, TO-247
AED 12.00
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Only 18 left


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The IRG4PF50W is a 900V, 51A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Manufactured using advanced IGBT technology, this device offers low conduction and switching losses, making it ideal for welding equipment, switch-mode power supplies (SMPS), and high-power inverters.
With a Collector-Emitter Voltage (VCES) rating of 900V and a Continuous Collector Current of 51A, the IRG4PF50W is optimized for applications requiring efficient power switching. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 2.25V reduces conduction losses, improving overall energy efficiency.
The device's fast switching characteristics, combined with reduced Eoff (turn-off energy losses), enhance performance in welding equipment, power factor correction (PFC) circuits, and industrial power applications. Encased in a TO-247 package, the IRG4PF50W provides excellent thermal performance and high durability, ensuring reliable operation.
Key Features :GTIN | 1, |
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Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |