G4PF50W, N-Channel IGBT with Low Saturation Voltage, TO-247

The IRG4PF50W is a 900V, 51A N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Manufactured using advanced IGBT technology, this device offers low conduction and switching losses, making it ideal for welding equipment, switch-mode power supplies (SMPS), and high-power inverters.

With a Collector-Emitter Voltage (V_CES) rating of 900V and a Continuous Collector Current of 51A, the IRG4PF50W is optimized for applications requiring efficient power switching. The low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.25V reduces conduction losses, improving overall energy efficiency.

The device's fast switching characteristics, combined with reduced Eoff (turn-off energy losses), enhance performance in welding equipment, power factor correction (PFC) circuits, and industrial power applications. Encased in a TO-247 package, the IRG4PF50W provides excellent thermal performance and high durability, ensuring reliable operation.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 900V, suitable for high-voltage applications.
• High Current Capability: Continuous Collector Current of 51A at 25°C, and 28A at 100°C.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.25V at 28A, minimizing conduction losses.
• Fast Switching Performance: Optimized for high-speed operation with a turn-on delay time of 29 ns and turn-off delay time of 170 ns.
• Optimized for Welding and Power Supply Applications: Reduced switching losses improve efficiency in all power supply topologies.
• Standard TO-247 Package: Provides efficient heat dissipation and ease of integration into various circuit designs.