11N60C3, N-Channel Power MOSFET, TO-220AB

The 11N60C3 is a high-voltage, high-speed switching N-channel MOSFET developed using advanced planar technology. Its 650V breakdown voltage, low R_DS(on), and fast switching characteristics make it ideal for use in switch-mode power supplies, motor control, lighting ballasts, and industrial inverters. Its TO-220AB package supports excellent thermal performance for demanding power conversion applications.

Key Features:

• High Voltage Tolerance: Supports up to 650 V drain-source voltage.
• Strong Current Handling: Capable of 11 A continuous drain current at 25°C.
• Low On-Resistance: Maximum R_DS(on) of 0.3 Ω at V_GS = 10 V.
• Low Gate Charge: Total gate charge of 71 nC for efficient switching.
• High Power Dissipation: Rated for up to 208 W (with proper heat sinking).
• Avalanche Rated: Built to sustain high-energy inductive load switching.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 11A At 25°C
• Drain-Source Breakdown Voltage (Vds): 650V
• Gate-Source Threshld Voltage (Vgs th): 2.5-4V
• Power Dissipation: 208W
• Operating Temprature: -55+150°C