2SK796, N-Channel Silicon Power MOSFET, TO-247-3 Package

The 2SK796 is a silicon N-channel power MOSFET designed for high-voltage and high-speed switching applications. With a drain-source voltage rating of 900V and a typical on-resistance of 3.0Ω, it is suitable for use in no-contact relays, solenoid drives, motor drives, control equipment, and switching power sources. The transistor's fast switching speed and absence of secondary breakdown contribute to efficient and reliable performance. Packaged in the TO-247-3 form factor, it ensures efficient heat dissipation and ease of mounting.

• High Breakdown Voltage: Withstands up to 900V, making it suitable for high-voltage applications.
• Low On-Resistance: Features a typical R_DS(on) of 3.0Ω, reducing conduction losses.
• Fast Switching Speed: Typical fall time of 40ns, ideal for high-speed switching applications.
• No Secondary Breakdown: Enhances reliability under high-stress conditions.
• High Power Dissipation: Capable of dissipating significant power, suitable for demanding applications.
• TO-247-3 Package: Provides efficient heat dissipation and ease of mounting.