FQPF11N80C, N-Channel Power MOSFET, TO-220F-3

The FQPF11N80C is a high-speed, high-voltage N-channel MOSFET from ON Semiconductor. It offers excellent switching performance and rugged avalanche energy capability, making it ideal for high-efficiency power supplies, motor control, and industrial equipment. The TO-220F-3 package features full isolation for ease of use in grounded heatsink applications.

Key Features:

• High Voltage Rating: Capable of handling up to 800V drain-source voltage.
• Moderate Current Handling: Continuous drain current of 11A at 25°C.
• Low On-Resistance: R_DS(on) of 0.85Ω typical for improved efficiency.
• Avalanche Rated: Designed to withstand inductive loads and transient energy.
• Fast Switching: Gate charge of 47nC for high-speed switching circuits.
• TO-220F Insulated Package: Fully isolated tab for safety and heat control.

Additional Specifications:

• Mounting Style: Through-Hole
• Continuous Current Drain (Id): 11A
• Drain-Source Breakdown Voltage (Vds): 800V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 50W
• Operating Temprature: -55+150°C