IXTP26P20P, P-Channel Enhancement Mode MOSFET, TO-220-3

The IXTP26P20P is a P-channel enhancement mode MOSFET designed for high-voltage and high-current applications. Its robust construction allows it to handle drain-source voltages up to -200V and continuous drain currents up to -26A. The low on-resistance of 0.18Ω ensures minimal power loss during operation. Additionally, being avalanche rated, it can withstand high-energy pulses, making it suitable for demanding applications such as power supplies, motor control, and other high-speed switching applications.

Key Features:

• High Voltage Capability: Withstands drain-source voltages up to -200V.
• High Current Handling: Supports continuous drain currents up to -26A.
• Low On-Resistance: Typical R_DS(on) of 0.18Ω minimizes conduction losses.
• Avalanche Rated: Designed to handle high-energy pulses without performance degradation.
• Efficient Switching: Optimized for fast switching applications, enhancing efficiency.
• TO-220-3 Package: Standard through-hole package facilitating easy mounting and effective heat dissipation.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): -26A
• Drain-Source Breakdown Voltage (Vds): -200V
• Gate-Source Threshld Voltage (Vgs th): -2-4V
• Power Dissipation: 250W
• Operating Temprature: -55+150°C