IRFZ48N, N-Channel Power MOSFET, TO-220

The IRFZ48N is an N-Channel Power MOSFET designed for high-efficiency switching applications. With a low on-resistance of 0.014 Ω and a high continuous drain current of 64 A, it is ideal for use in DC motors, inverters, switch-mode power supplies (SMPS), lighting, load switches, and battery-powered applications. The device features a Drain-Source Breakdown Voltage of 55 V and a Gate-Source Threshold Voltage ranging from 2.0 V to 4.0 V, ensuring reliable operation in various circuits. Encased in a TO-220 package, the IRFZ48N offers excellent thermal performance and is suitable for both low and high switching frequency applications.

• Low on-resistance (R_DS(on)) of 0.014 Ω for efficient power management.
• High continuous drain current of 64 A at 25°C.
• Drain-Source Breakdown Voltage (V_DSS) of 55 V.
• Gate-Source Threshold Voltage (V_GS(th)) between 2.0 V and 4.0 V.
• Power dissipation capacity of 130 W.
• Operating junction temperature range from -55°C to +175°C.