IRG4BC20UD, N-Channel UltraFast IGBT with Soft Recovery Diode, TO-220AB
AED 10.00
In stock


Guarantee safe & secure checkout
Guarantee safe & secure checkout
The IRG4BC20UD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and other power conversion circuits.
With a Collector-Emitter Voltage (VCES) rating of 600V and a Continuous Collector Current of 13A at 25°C, the IRG4BC20UD provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(on)) of 1.85V at 6.5A minimizes conduction losses, enhancing overall efficiency.
The device's UltraFast switching capabilities make it suitable for high-frequency applications, while the integrated UltraFast Soft Recovery Diode enhances performance in various power applications. Encased in a standard TO-220AB package, the IRG4BC20UD offers ease of integration into various circuit designs, providing efficient heat dissipation and reliableKey Features :
GTIN | 1, |
---|---|
Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
|
![]() |
Available |
Self Pickup |
1 Day |
Free |
![]() |
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
![]() |
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
![]() |
pre-order |
General |
2 Weeks |