VN2210N2, N-Channel DMOS Power FET, TO-92

The VN2210N2 is a vertical N-channel enhancement-mode DMOS FET utilizing Supertex’s silicon-gate process. It provides high-speed switching and excellent thermal and electrical stability. Designed for applications such as motor control, converters, amplifiers, and switching, it combines the high voltage and ruggedness of bipolar devices with the high input impedance of MOSFETs.

Key Features:

• High Voltage Rating: Drain-to-source breakdown voltage up to 100V.
• Low On-Resistance: R_DS(on) as low as 0.27Ω at V_GS = 10V.
• Fast Switching Speed: Rise/fall times under 50ns for efficient operation.
• Low Gate Drive Requirement: Operates from logic-level signals (2.4V threshold).
• Integral Body Diode: Enhances efficiency in inductive load switching.
• Compact TO-92 Package: Ideal for low-to-medium power applications in compact designs.

Additional Specifications:

• Mounting Style: Through-Hole
• Continuous Current Drain (Id): 1.2A
• Drain-Source Breakdown Voltage (Vds): 100V
• Gate-Source Threshld Voltage (Vgs th): 0.8-2.4V
• Power Dissipation: 1W
• Operating Temprature: -55+150°C