TK100E08N1, N-Channel Power MOSFET, TO-220

The TK100E08N1 from Toshiba is a high-performance N-channel MOSFET designed for demanding switching applications. With a high drain current capability of up to 214A and breakdown voltage of 80V, it is suitable for use in power supply circuits, DC-DC converters, and synchronous rectification. The device is optimized for low on-resistance and high efficiency, and its TO-220 package allows excellent heat dissipation.

Key Features:

• Ultra-Low On-Resistance: Just 2.6 mΩ typical at Vgs = 10V, reducing conduction losses.
• Extremely High Current Rating: Continuous drain current of up to 214A under ideal conditions.
• Robust Avalanche Energy Handling: Can handle 278 mJ of single-pulse avalanche energy.
• Fast Switching Characteristics: Ideal for switching voltage regulators and motor drivers.
• Gate Drive Flexibility: 2.0–4.0 V threshold supports standard 10V gate drive.
• TO-220 Package: Through-hole type with excellent thermal handling and mechanical stability.

Additional Specifications:

• Mounting Style: Through-Hole
• Continuous Current Drain (Id): 100A
• Drain-Source Breakdown Voltage (Vds): 80V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 255W
• Operating Temprature: -55+150°C