J13009-2,NPN Silicon Power Transistor,400V,12A,TO-220-3

The J13009-2 is a high-performance NPN silicon power transistor designed for a range of applications including motor control, switching regulators, and electronic ballasts. With a maximum collector-emitter voltage (V_CEO) of 400V and a continuous collector current (I_C) of 12A, this transistor provides reliable performance in high-voltage environments. Its fast-switching capabilities ensure efficient operation in demanding circuits. Encased in a standard TO-220-3 package, it allows for easy mounting and integration into various electronic designs.

Key technical specifications include a collector-base voltage (V_CBO) of 700V, emitter-base voltage (V_EBO) of 9V, and a maximum power dissipation of 100W. This transistor is designed to operate efficiently across a wide range of temperatures, making it suitable for both consumer electronics and industrial applications.

• High Voltage Capability: Supports up to 400V collector-emitter voltage, ideal for applications that require reliable high voltage operation.
• High Current Handling: Continuous collector current of 12A, providing robust performance for demanding power applications.
• Fast Switching: Optimized for high-speed switching, enhancing efficiency in electronic circuits.
• Versatile Applications: Suitable for motor control, switching regulators, and electronic ballast applications.
• Reliable Performance: Designed for high efficiency and consistent operation, reducing the need for frequent replacements.
• Standard Package: Comes in a TO-220-3 package, making it easy to integrate into various circuit designs.