You may check out all the available products and buy some in the shop.
IRGP4266D, N-Channel IGBT with Ultrafast Soft Recovery Diode, TO-247AC
AED 15.00


Guarantee safe & secure checkout
You may check out all the available products and buy some in the shop.
Guarantee safe & secure checkout
The IRGP4266D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.
With a Collector-Emitter Voltage (VCES) rating of 650V and a Continuous Collector Current of 90A at 100°C, the IRGP4266D provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(on)) of 1.7V at 75A minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.
The device is designed to withstand short circuit conditions for up to 5.5µs, enhancing its reliability in fault scenarios. Additionally, it features an integrated ultrafast soft recovery anti-parallel diode, improving overall performance in switching applications.
Encased in a TO-247AC package, the IRGP4266D offers ease of integration into various circuit designs.
Key Features :Operating Temperature | -40+175C |
---|---|
Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
|
![]() |
Available |
Self Pickup |
1 Day |
Free |
![]() |
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
![]() |
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
![]() |
pre-order |
General |
4-5 Weeks |