20N60A4, 600V, 20A N-Channel IGBT, TO-220-3
AED 8.00
In stock


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The 20N60A4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), welding equipment, and induction heating systems. With a Collector-Emitter Voltage (VCE) rating of 600V and a Continuous Collector Current of 20A at 25°C, the 20N60A4 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(sat)) of approximately 1.8V at 20A minimizes conduction losses, while a typical fall time of 55ns at 125°C ensures efficient high-speed switching. Encased in a TO-220-3 package, the 20N60A4 offers ease of integration into various circuit designs. Its thermal performance, with a Maximum Power Dissipation of 290W at 25°C, ensures reliable operation under thermal stress.
Key Features :GTIN | 1, |
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Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |