2PG001,N-Channel Enhancement Mode IGBT with Fast Switching, TO-220F
AED 6.00
Only 5 left


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The 2PG001 is an N-Channel Enhancement Mode Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching circuits and plasma display panel (PDP) drive applications. This IGBT integrates low conduction losses with fast switching speeds, making it ideal for high-frequency power applications.
With a Collector-Emitter Voltage (VCES) of 300V and a Continuous Collector Current of 30A, the 2PG001 provides robust performance for demanding switching applications. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 2.0V to 2.5V at 30A ensures minimal energy losses, improving overall system efficiency.
Designed in a TO-220F package, the 2PG001 offers enhanced thermal performance and electrical isolation, simplifying circuit integration and cooling requirements. This device is suitable for applications requiring fast switching, high efficiency, and compact design.
Key Features :Operating Temperature | -55+150C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |