V53C16126HK40, 16Mbit (128K x 16) CMOS Fast Page Mode DRAM,SOJ-40

The V53C16126HK40 is a 16Mbit (128K x 16-bit) CMOS Fast Page Mode Dynamic Random-Access Memory (DRAM) designed for high-performance applications such as graphics processing, industrial automation, networking, and embedded systems. Built using advanced CMOS technology, this DRAM combines high speed with low power consumption.

Operating at an access time of 40ns, the V53C16126HK40 ensures quick and efficient data transfer for time-sensitive processes. Its Fast Page Mode operation allows for random access within a memory page, optimizing performance for data-intensive applications. The memory layout supports dual CAS (UCAS and LCAS) inputs, enabling byte-level control.

This DRAM operates at a single 5V power supply and offers RAS-Only Refresh, CAS-Before-RAS Refresh, and Hidden Refresh modes, ensuring optimal data retention and stability. The compact SOJ-40 package (Small Outline J-Lead) is ideal for space-constrained circuit boards, providing an efficient solution for high-density designs.

The V53C16126HK40 is well-suited for applications requiring high-speed memory access, low power consumption, and compact integration.

• 16Mbit DRAM: Organized as 128K x 16-bit, offering high-speed and efficient volatile memory storage.
• 40ns Access Time: Ensures fast data retrieval for demanding applications like graphics, telecommunications, and embedded systems.
• Fast Page Mode Operation: Supports high-speed sequential data access with a sustained data rate of 53MHz.
• Dual CAS Inputs: Separate UCAS and LCAS enable byte-level control for enhanced memory management.
• Refresh Modes: Includes RAS-Only Refresh, CAS-Before-RAS Refresh, and Hidden Refresh, ensuring data retention and reliability.
• SOJ-40 Package: Compact 40-pin Small Outline J-Lead Package designed for surface mounting, saving space on high-density PCBs.