MB81C4256A-70PSZ, 1 Megabit (256K x 4) CMOS Fast Page Mode DRAM, 70ns Access Time

The MB81C4256A-70PSZ is a high-performance CMOS dynamic random-access memory (DRAM) chip, organized as 256K words by 4 bits, totaling 1 Megabit of storage. Designed for applications requiring high-speed and efficient memory solutions, this DRAM supports fast page mode operations, allowing for rapid data access and improved system performance. Built with advanced 3-dimensional stacked capacitor cell technology, it offers superior α-ray soft error immunity and extended data retention, ensuring data integrity and reliability. The CMOS design contributes to low power consumption, making it suitable for both high-performance and energy-efficient applications. The device operates with a 5V power supply and features a maximum access time of 70 nanoseconds, making it ideal for systems that demand quick memory access. It is compatible with various refresh modes, including RAS-only, CAS-before-RAS, and hidden refresh cycles, providing flexibility in memory management.

• High-Density Memory: Organized as 256K words by 4 bits, providing a total of 1 Megabit storage capacity.
• Fast Page Mode Operation: Supports fast page mode for high-speed data access.
• Low Power Consumption: Designed with CMOS technology to ensure low power dissipation.
• High Reliability: Features a 3-dimensional stacked capacitor cell for enhanced α-ray soft error immunity and extended data retention.
• TTL Compatible: All inputs and outputs are TTL compatible, facilitating easy integration with various systems.
• Multiple Refresh Modes: Supports RAS-only, CAS-before-RAS, and hidden refresh cycles for flexible memory management.