JORD
IRL540N, HEXFET Power MOSFET, 100V, 30A, 0.044Ω RDS(on), TO-220-3
AED 5.00
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The IRL540N is a logic-level HEXFET® power MOSFET designed for fast switching and low on-resistance applications. It operates with a drain-to-source breakdown voltage of 100V and can handle continuous drain currents of up to 30A at Vgs = 10V. The low RDS(on) value of 0.044Ohm makes it ideal for high-efficiency switching applications.
The MOSFET is fully avalanche-rated, with a high pulse-current rating, making it suitable for motor control, switching regulators, and other industrial applications. It comes in a TO-220-3 package, which is known for its excellent thermal performance and ease of mounting for various applications.Key Features :
- High Drain Current: Supports a continuous drain current of up to 30A at Vgs = 10V, ensuring suitability for power-hungry applications.
- Low On-Resistance: With a typical RDS(on) of 0.044Ohm, the IRL540N offers low conduction losses, optimizing efficiency.
- Fast Switching: Capable of a fast rise time of 81ns and fall time of 62ns, enabling rapid switching in high-frequency circuits.
- Fully Avalanche Rated: The device is rated for avalanche energy, providing robustness in demanding applications.
- Isolated Package: The TO-220 package offers thermal isolation with low thermal resistance.
- High Voltage Capability: Supports a drain-to-source voltage of 100V, ideal for high-voltage applications.
| Operating Temperature | -55C To +175C |
|---|---|
| Mounting Style | Through Hole |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |