FQD2N80, N-Channel MOSFET, TO-252 Package

The FQD2N80 is an N-channel enhancement mode power MOSFET produced using advanced planar stripe and DMOS technology. This device is tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

• High Voltage Capability: Withstands a drain-source voltage (V_DS) of up to 800V, suitable for high-voltage applications.
• Moderate Current Handling: Supports a continuous drain current (I_D) of 1.8A at 25°C, accommodating moderate power loads.
• Low On-Resistance: Features a maximum R_DS(on) of 6.3Ω at V_GS = 10V, reducing conduction losses.
• Fast Switching Performance: Designed for rapid switching operations, enhancing efficiency in high-frequency applications.
• Low Gate Charge: Exhibits a typical gate charge of 12nC, facilitating efficient driving.
• TO-252 Package: Provides efficient heat dissipation and ease of mounting.