JORD
FQD2N80, N-Channel MOSFET, TO-252 Package
AEDÂ 5.00
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The FQD2N80 is an N-channel enhancement mode power MOSFET produced using advanced planar stripe and DMOS technology. This device is tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Features:
- High Voltage Capability: Withstands a drain-source voltage (VDS) of up to 800V, suitable for high-voltage applications.
- Moderate Current Handling: Supports a continuous drain current (ID) of 1.8A at 25°C, accommodating moderate power loads.
- Low On-Resistance: Features a maximum RDS(on) of 6.3Ω at VGS = 10V, reducing conduction losses.
- Fast Switching Performance: Designed for rapid switching operations, enhancing efficiency in high-frequency applications.
- Low Gate Charge: Exhibits a typical gate charge of 12nC, facilitating efficient driving.
- TO-252 Package: Provides efficient heat dissipation and ease of mounting.
| Package Type | N/A |
|---|---|
| Operating Temperature | -55+150°C |
| IC type | N/A |
| Mounting Style | Surface Mount |
| Function | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
Urban Areas in UAE |
1 - 2 Days |
AED 15 / Free Above AED 100 |
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Available |
Remote Areas in UAE |
2 - 3 Days |
AED 15 / Free Above AED 100 |
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Available |
International |
4 - 7 Days |
AED 180 / $ 49 |
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Pre-Order |
General |
4-5 Weeks |