Specifications:

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 150(max) nC
Rise Time (tr): 49 nS
Drain-Source Capacitance (Cd): 660 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm