IRF9530NPBF

SKU
SCIx3902
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"Specifications:


Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 14 A
Rds On - Drain-Source Resistance: 200 mOhms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 38.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 175 C
Pd - Power Dissipation: 79 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 46 ns
Forward Transconductance - Min: 3.2 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 58 ns
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 15 ns
Width: 4.4 mm
Unit Weight: 2 g

"

More Information
Brand Generic
GTIN 1,
IC type N/A
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

2 Weeks

 

IRF9530NPBF

AED 12.00