JORD
GT30J322
AED 15.00
In stock
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Specifications:
Type: IGBT Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 75
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 30
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 200
Package: TO3P
| Brand | Generic |
|---|---|
| GTIN | 1, |
| Max Voltage | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
|
|
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
|
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |