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G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

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G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

SKU

SCTx1104

Part Number

G60H65DFB

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Specifications :

Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 38
Collector Capacity (Cc), typ, pF: 262

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