G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

SKU
SCTx1104
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Part Number
G60H65DFB
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Specifications :


Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 38
Collector Capacity (Cc), typ, pF: 262 

More Information
Brand Besomi
GTIN 1,
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180 AED / 49 $

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G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

AED 15.00