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G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.
G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

G60H65DFB TO-247 N-Channel MOSFET Transistor-Enhanced Power Efficiency, Optimal for High-Switching Applications.

SKU
SCTx1104
Part Number
G60H65DFB
Brand:
Besomi
Categories:
Semiconductors, IGBT
AED 15.00
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Specifications :


Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 38
Collector Capacity (Cc), typ, pF: 262 

More Information
Output Current 60A
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

Urban Areas in UAE

1 - 2 Days

AED 15 / Free Above AED 100

Available

Remote Areas in UAE

2 - 3 Days

AED 15 / Free Above AED 100

Available

International
(This is a base estimate only. The final shipping cost
depends on your order's actual weight, size, and destination.)

4 - 7 Days

AED 180 / $ 49

Pre-Order

General

4-5 Weeks