Specifications:

Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 145 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 700 W
Package/Case: Half Bridge1
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.5 mm
Length: 94 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount