Specifications :

Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 1.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 29 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm