TLP251-DIP

The TOSHIBA TLP251 consists of a GaAâ„“As light emitting diode and a
integrated photodetector.
This unit is an 8-lead DIP package.
TLP251 is suitable for gate driving circuits of IGBT or power MOSFET.
The TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)

Input threshold current: IF=5mA(max.)
Supply current (ICC): 11mA(max.)
Supply voltage (VCC): 10−35V
Output current (IO): ±0.4A(max.)
Switching time (tpLH / tpHL): 1µs(max.)
Isolation voltage: 2500Vrms(min.)
UL recognized: UL1577, file no.E67349